FF07035J-7A fastSiC
Hersteller: fastSiCDescription: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.32 EUR |
| 10+ | 12.59 EUR |
| 100+ | 11.73 EUR |
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Technische Details FF07035J-7A fastSiC
Description: SICFET N-CH 750V 61A TO-263-7L, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V, Power Dissipation (Max): 267W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 40mA, Supplier Device Package: TO-263-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V.