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FF07150M2D

FF07150M2D fastSiC

FF07150M2D.pdf Hersteller: fastSiC
Description: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101
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Technische Details FF07150M2D fastSiC

Description: SICFET N-CH 750V 14A TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 6mA, Supplier Device Package: TO-220-3 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +15V, -8V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V, Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V, Qualification: AEC-Q101.