FF600R12ME4AB11BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 3350W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 411.8 EUR |
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Technische Details FF600R12ME4AB11BOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 3350W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 3350 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.
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FF600R12ME4AB11BOSA1 | Hersteller : Infineon Technologies |
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