FF600R12ME4AB11BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 3350W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 455.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FF600R12ME4AB11BOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 3350W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 3350 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.
Weitere Produktangebote FF600R12ME4AB11BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
FF600R12ME4AB11BOSA1 | Hersteller : Infineon Technologies |
Econo DUAL 3modulewithTrench Field stop IGBT4 and Emitter Controlled 4 diode and Press FIT NTC |
Produkt ist nicht verfügbar |