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FGA180N33ATTU ON Semiconductor

Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 330V 180A 390000mW 3-Pin(3+Tab) TO-3P Tube

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Technische Details FGA180N33ATTU ON Semiconductor

Description: IGBT 330V 180A 390W TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench, Gate Charge: 169 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 180 A, Voltage - Collector Emitter Breakdown (Max): 330 V, Current - Collector Pulsed (Icm): 450 A, Power - Max: 390 W.

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Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	FGA180N33ATTU	Hersteller : onsemi	Description: IGBT 330V 180A 390W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 169 nC Part Status: Obsolete Current - Collector (Ic) (Max): 180 A Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 450 A Power - Max: 390 W	Produkt ist nicht verfügbar