FGA25N120FTD ON Semiconductor
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Technische Details FGA25N120FTD ON Semiconductor
Description: IGBT 1200V 50A 313W TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 770 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 48ns/210ns, Switching Energy: 340µJ (on), 900µJ (off), Test Condition: 600V, 25A, 15Ohm, 15V, Gate Charge: 160 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 313 W.
Weitere Produktangebote FGA25N120FTD
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FGA25N120FTD | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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FGA25N120FTD | Hersteller : onsemi |
Description: IGBT 1200V 50A 313W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 770 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/210ns Switching Energy: 340µJ (on), 900µJ (off) Test Condition: 600V, 25A, 15Ohm, 15V Gate Charge: 160 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 313 W |
Produkt ist nicht verfügbar |