Hersteller: FAIR/ON
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W

FGH60N60SFDTU Транзисторы IGB-transistors

Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube

Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W

Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube

Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101