FMOSBSS123K-Q1-H Formosa Microsemi Co., Ltd.
Hersteller: Formosa Microsemi Co., Ltd.Description: 170mA, 100V N-Channel Enhancemen
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Qualification: AEC-Q101
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.031 EUR |
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Technische Details FMOSBSS123K-Q1-H Formosa Microsemi Co., Ltd.
Description: 170mA, 100V N-Channel Enhancemen, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Qualification: AEC-Q101.