FMOSGTQC330N10-Q1-H Formosa Microsemi Co., Ltd.
Hersteller: Formosa Microsemi Co., Ltd.Description: 330A 100V N-Channel Shield Gate
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Qualification: AEC-Q101
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 1.81 EUR |
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Technische Details FMOSGTQC330N10-Q1-H Formosa Microsemi Co., Ltd.
Description: 330A 100V N-Channel Shield Gate, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A, Power Dissipation (Max): 400W (Tc), Supplier Device Package: TOLL-8L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Qualification: AEC-Q101.