Produkte > FORMOSA MICROSEMI CO., LTD. > FMOSGTQC393N10-Q1-H
FMOSGTQC393N10-Q1-H

FMOSGTQC393N10-Q1-H Formosa Microsemi Co., Ltd.


FMOSGTQC393N10-Q1-H_REV_A.pdf
Hersteller: Formosa Microsemi Co., Ltd.
Description: 393A 100V N-Channel Shield Gate
Qualification: AEC-Q101
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Grade: Automotive
Supplier Device Package: TOLL-8L
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TOLL
Packaging: Tape & Reel (TR)
auf Bestellung 300000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.01 EUR
4000+1.85 EUR
10000+1.8 EUR
20000+1.69 EUR
100000+1.64 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FMOSGTQC393N10-Q1-H Formosa Microsemi Co., Ltd.

Description: 393A 100V N-Channel Shield Gate, Qualification: AEC-Q101, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Grade: Automotive, Supplier Device Package: TOLL-8L, Power Dissipation (Max): 429W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TOLL, Packaging: Tape & Reel (TR).