FMSNP3401-Q1-H Formosa Microsemi Co., Ltd.
Hersteller: Formosa Microsemi Co., Ltd.Description: -4.2A -30V P-Channel Trench Enha
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Vgs (Max): ±12V
Qualification: AEC-Q101
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.055 EUR |
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Technische Details FMSNP3401-Q1-H Formosa Microsemi Co., Ltd.
Description: -4.2A -30V P-Channel Trench Enha, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Vgs (Max): ±12V, Qualification: AEC-Q101.