FMSNP3401-Q1-H Formosa Microsemi Co., Ltd.
Hersteller: Formosa Microsemi Co., Ltd.
Description: -4.2A -30V P-Channel Trench Enha
Qualification: AEC-Q101
Vgs (Max): ±12V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.055 EUR |
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Technische Details FMSNP3401-Q1-H Formosa Microsemi Co., Ltd.
Description: -4.2A -30V P-Channel Trench Enha, Qualification: AEC-Q101, Vgs (Max): ±12V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).