FQD1P50TM

FQD1P50TM ON Semiconductor


fqd1p50.pdf Hersteller: ON Semiconductor
Trans MOSFET P-CH 500V 1.2A 3-Pin(2+Tab) DPAK T/R
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Technische Details FQD1P50TM ON Semiconductor

Description: MOSFET P-CH 500V 1.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc), Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V, Power Dissipation (Max): 2.5W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

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FQD1P50TM FQD1P50TM Hersteller : onsemi FQD1P50.pdf Description: MOSFET P-CH 500V 1.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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