FQE10N20LCTU onsemi
Hersteller: onsemiDescription: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-126-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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Technische Details FQE10N20LCTU onsemi
Description: MOSFET N-CH 200V 4A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V, Power Dissipation (Max): 12.8W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-126-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.