FZ1200R12HE4HOSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1.2kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1825 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 74 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 980.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FZ1200R12HE4HOSA2 Infineon Technologies
Description: IGBT MODULE 1200V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1.2kA, NTC Thermistor: No, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1825 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 7150 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 74 nF @ 25 V.
Weitere Produktangebote FZ1200R12HE4HOSA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FZ1200R12HE4HOSA2 | Hersteller : Infineon Technologies |
IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled4 diode |
Produkt ist nicht verfügbar |