G170P03S2 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET P+P-CH 30V 11A SOP-8 DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1786pF @ -15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ -10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.33 EUR |
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Technische Details G170P03S2 Goford Semiconductor
Description: MOSFET P+P-CH 30V 11A SOP-8 DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1786pF @ -15V, Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ -10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.