G230P06S Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 9A SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V
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Technische Details G230P06S Goford Semiconductor
Description: MOSFET P-CH 60V 9A SOP-8L, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V.
Weitere Produktangebote G230P06S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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G230P06S | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -9A; 3W; SOP8 Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -9A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 62nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G230P06S |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -9A; 3W; SOP8
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -9A; 3W; SOP8
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH