Produkte > GOFORD SEMICONDUCTOR > G4614

G4614 GOFORD SEMICONDUCTOR


Hersteller: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 40/-40V; 6/-7A; SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOP8
Technology: Trench
Polarisation: unipolar
Gate charge: 15/25nC
Power dissipation: 1.9/2.66W
Drain current: 6/-7A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
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Technische Details G4614 GOFORD SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; Trench; unipolar; 40/-40V; 6/-7A; SOP8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N/P-MOSFET, Case: SOP8, Technology: Trench, Polarisation: unipolar, Gate charge: 15/25nC, Power dissipation: 1.9/2.66W, Drain current: 6/-7A, Gate-source voltage: ±20V, Drain-source voltage: 40/-40V.