GBI10J-T DIOTEC SEMICONDUCTOR
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.19 EUR |
| 129+ | 0.56 EUR |
| 1500+ | 0.33 EUR |
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Technische Details GBI10J-T DIOTEC SEMICONDUCTOR
Description: BRIDGE 1-PH GBI 600V 10A, Packaging: Bulk, Package / Case: 4-SIP, GBI, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -50°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBI, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 3 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote GBI10J-T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GBI10J-T | Hersteller : Diotec Semiconductor |
 Description: BRIDGE 1-PH GBI 600V 10APackaging: Bulk Package / Case: 4-SIP, GBI Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBI Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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