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GCMX005A120S3B1-N SemiQ

gcmx005a120s3b1-n.pdf Hersteller: SemiQ
Description: 1200V, 5M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.531kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 424A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+291.53 EUR
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Technische Details GCMX005A120S3B1-N SemiQ

Description: 1200V, 5M SIC MOSFET HALF BRIDGE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.531kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 424A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V, Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V, Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 80mA.