GCMX016C120S1-E1 SemiQ
Hersteller: SemiQDescription: GEN3 1200V 16M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 41.1 EUR |
| 10+ | 29.97 EUR |
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Technische Details GCMX016C120S1-E1 SemiQ
Description: GEN3 1200V 16M SIC MOSFET MODULE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V, Power Dissipation (Max): 303W (Tc), Vgs(th) (Max) @ Id: 4V @ 20mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V.