GD100PIY120C6SN STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
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Technische Details GD100PIY120C6SN STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 100A, Case: C6 62mm, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw, Anzahl je Verpackung: 10 Stücke.
Weitere Produktangebote GD100PIY120C6SN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GD100PIY120C6SN | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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