GD225HFX170C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB; screw, Case: C6 62mm, Mechanical mounting: screw, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 225A, Pulsed collector current: 450A, Technology: Trench FS IGBT, Topology: IGBT half-bridge, Anzahl je Verpackung: 10 Stücke.