GD600HFY120P1S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Case: P1.0, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 600A, Pulsed collector current: 1.2kA, Anzahl je Verpackung: 9 Stücke.