GD600HFY120P1S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: P1.0
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 9 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: P1.0
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 9 Stücke
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Technische Details GD600HFY120P1S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Case: P1.0, Electrical mounting: screw, Topology: IGBT half-bridge, Mechanical mounting: screw, Collector current: 600A, Pulsed collector current: 1.2kA, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 9 Stücke.
Weitere Produktangebote GD600HFY120P1S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GD600HFY120P1S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: P1.0 Electrical mounting: screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |