GD600HFY120P1S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: P1.0
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: P1.0
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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Technische Details GD600HFY120P1S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Gate-emitter voltage: ±20V, Collector current: 600A, Pulsed collector current: 1.2kA, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Case: P1.0, Electrical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Mechanical mounting: screw, Semiconductor structure: transistor/transistor.