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GE12090CDA3

GE12090CDA3 GE Aerospace

GE12090CDA3-1200V-875A-half-bridge-module-datasheet-rev1.2.pdf Hersteller: GE Aerospace
Description: MOSFET 2N-CH 1200V 875A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2350W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 875A
Input Capacitance (Ciss) (Max) @ Vds: 58.6nF @ 600V
Rds On (Max) @ Id, Vgs: 2.19mOhm @ 950A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 320mA
Supplier Device Package: Module
Qualification: AEC-Q101
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Technische Details GE12090CDA3 GE Aerospace

Description: MOSFET 2N-CH 1200V 875A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2350W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 875A, Input Capacitance (Ciss) (Max) @ Vds: 58.6nF @ 600V, Rds On (Max) @ Id, Vgs: 2.19mOhm @ 950A, 20V, Vgs(th) (Max) @ Id: 4.5V @ 320mA, Supplier Device Package: Module, Qualification: AEC-Q101.