GE17042BCA3 GE Aerospace
Hersteller: GE AerospaceDescription: 1700V 425A SiC Dual Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2221.12 EUR |
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Technische Details GE17042BCA3 GE Aerospace
Description: 1700V 425A SiC Dual Module, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1250W, Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 425A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V, Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V, Vgs(th) (Max) @ Id: 4.5V @ 160mA, Part Status: Active.