GI856/MR856 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Technische Details GI856/MR856 NTE Electronics, Inc
Description: DIODE GEN PURP 600V 3A DO201AD, Packaging: Bag, Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Capacitance @ Vr, F: 28pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -50°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.