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GPA020A120MN-FD

GPA020A120MN-FD SemiQ

GPA020A120MN-FD_REV1.1_10-13.pdf Hersteller: SemiQ
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
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Technische Details GPA020A120MN-FD SemiQ

Description: IGBT 1200V 40A 223W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 425 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/150ns, Switching Energy: 2.8mJ (on), 480µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 210 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 223 W.