GPA030A135MN-FDR SemiQ

Description: IGBT 1350V 60A 329W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 450 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/145ns, Switching Energy: 4.4mJ (on), 1.18mJ (off), Test Condition: 600V, 30A, 5Ohm, 15V, Gate Charge: 300 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 329 W.