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GPA040A120MN-FD

GPA040A120MN-FD SemiQ

GPA040A120MN-FD_REV0.0_3-14.pdf Hersteller: SemiQ
Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
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Technische Details GPA040A120MN-FD SemiQ

Description: IGBT 1200V 80A 480W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 55ns/200ns, Switching Energy: 5.3mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 480 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 480 W.