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GPI65030TO5L GaNPower

fixed-GPI65030TO5L_V1.3.pdf Hersteller: GaNPower
Description: GaNFET N-CH 650V 30A TO263-5L
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
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Lieferzeit 21-28 Tag (e)
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Technische Details GPI65030TO5L GaNPower

Description: GaNFET N-CH 650V 30A TO263-5L, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A, Vgs(th) (Max) @ Id: 1.4V @ 3.5mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7.5V, -12V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V.