GT035N06T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N-CH, 60V,170A, RD(MAX)<3.5M@10V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5064 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 3.71 EUR |
| 50+ | 2.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT035N06T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 170A, Power dissipation: 215W, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 70nC, Kind of channel: enhancement, Technology: SGT.
Weitere Produktangebote GT035N06T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
GT035N06T | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 70nC Kind of channel: enhancement Technology: SGT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT035N06T |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Power dissipation: 215W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 70nC
Kind of channel: enhancement
Technology: SGT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Power dissipation: 215W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 70nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH