GT070N15T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 150V140A 320W TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5864 pF @ 75 V
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.27 EUR |
| 10+ | 5.47 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details GT070N15T Goford Semiconductor
Description: MOSFET N-CH 150V140A 320W TO-22, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5864 pF @ 75 V.
Weitere Produktangebote GT070N15T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
GT070N15T | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 150V; 140A; 258W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 150V Drain current: 140A Power dissipation: 258W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 89nC Kind of channel: enhancement |
auf Bestellung 548 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| GT070N15T |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 150V; 140A; 258W; TO220
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 140A
Power dissipation: 258W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 89nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 150V; 140A; 258W; TO220
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 140A
Power dissipation: 258W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 89nC
Kind of channel: enhancement
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)