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GT090N06D52

GT090N06D52 Goford Semiconductor

GT090N06D52.pdf Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V
Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.63 EUR
15000+0.58 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GT090N06D52 Goford Semiconductor

Description: MOSFET 2N-CH 60V 40A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 62W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V, Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Part Status: Active.

Weitere Produktangebote GT090N06D52 nach Preis ab 0.59 EUR bis 2.68 EUR

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GT090N06D52 GT090N06D52 Hersteller : Goford Semiconductor GT090N06D52.pdf Description: MOSFET 2N-CH 60V 40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V
Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.7 EUR
100+1.14 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT090N06D52 Hersteller : GOFORD Semiconductor GT090N06D52.pdf Dual N-Channel Enhancement Mode Power MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT090N06D52 GT090N06D52 Hersteller : Goford Semiconductor GT090N06D52.pdf Description: MOSFET 2N-CH 60V 40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V
Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH