GT50J121(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A 240W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Test Condition: 300V, 50A, 13Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 240 W
Description: IGBT 600V 50A 240W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Test Condition: 300V, 50A, 13Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 240 W
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Technische Details GT50J121(Q) Toshiba Semiconductor and Storage
Description: IGBT 600V 50A 240W TO3P LH, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, Supplier Device Package: TO-3P(LH), Td (on/off) @ 25°C: 90ns/300ns, Switching Energy: 1.3mJ (on), 1.34mJ (off), Test Condition: 300V, 50A, 13Ohm, 15V, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 240 W.