Technische Details HAT2195R-EL-E HIT
Description: HAT2195R - N Channel MOSFET High, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V, Power Dissipation (Max): 2.5W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 10 V.
Weitere Produktangebote HAT2195R-EL-E
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
HAT2195RELE | Hersteller : RENESAS |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
|||
HAT2195R-EL-E | Hersteller : RENESAS | 04+ |
auf Bestellung 12774 Stücke: Lieferzeit 21-28 Tag (e) |
||
HAT2195R-EL-E | Hersteller : RENESAS | 06+ |
auf Bestellung 16090 Stücke: Lieferzeit 21-28 Tag (e) |
||
HAT2195R-EL-E | Hersteller : RENESAS | 09+ |
auf Bestellung 2168 Stücke: Lieferzeit 21-28 Tag (e) |
||
HAT2195R-EL-E | Hersteller : Renesas |
Description: HAT2195R - N Channel MOSFET High Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V Power Dissipation (Max): 2.5W Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 10 V |
Produkt ist nicht verfügbar |