HFGM100D12V1 HUAJING
Hersteller: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Technology: PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 48.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 100A, Case: V1, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±30V, Pulsed collector current: 200A, Technology: PT, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM100D12V1 nach Preis ab 48.18 EUR bis 48.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
HFGM100D12V1 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: V1 Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Technology: PT Mechanical mounting: screw |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
|