HFGM100D12V1 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: V1
Semiconductor structure: transistor/transistor
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 100A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: V1
Semiconductor structure: transistor/transistor
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 100A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 48.09 EUR |
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Technische Details HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Case: V1, Semiconductor structure: transistor/transistor, Pulsed collector current: 200A, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: PT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±30V, Collector current: 100A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM100D12V1 nach Preis ab 48.09 EUR bis 48.09 EUR
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HFGM100D12V1 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: V1 Semiconductor structure: transistor/transistor Pulsed collector current: 200A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 100A |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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