HFGM100D12V1 HUAJING
Hersteller: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 48.06 EUR |
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Technische Details HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Application: for UPS; Inverter, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Technology: PT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Case: V1, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM100D12V1 nach Preis ab 48.06 EUR bis 48.06 EUR
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HFGM100D12V1 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Application: for UPS; Inverter Type of semiconductor module: IGBT Topology: IGBT half-bridge Technology: PT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Case: V1 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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