HFGM100D12V1 HUAJING
Hersteller: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 48.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Case: V1, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 100A, Pulsed collector current: 200A, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: PT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM100D12V1 nach Preis ab 48.49 EUR bis 48.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
HFGM100D12V1 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: V1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 100A Pulsed collector current: 200A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
|