HFGM100D12V1 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
| Anzahl | Preis |
|---|---|
| 2+ | 69.43 EUR |
| 3+ | 62.48 EUR |
| 12+ | 55.21 EUR |
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Technische Details HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Technology: PT, Semiconductor structure: transistor/transistor, Case: V1, Gate-emitter voltage: ±30V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV.