HFGM150D12V3 HUAJING
Hersteller: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Mechanical mounting: screw
Case: V3 62MM
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Technology: PT
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 95.41 EUR |
| 3+ | 85.89 EUR |
| 10+ | 75.9 EUR |
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Technische Details HFGM150D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Topology: IGBT half-bridge, Mechanical mounting: screw, Case: V3 62MM, Type of semiconductor module: IGBT, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 150A, Pulsed collector current: 350A, Technology: PT, Max. off-state voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM150D12V3 nach Preis ab 95.41 EUR bis 95.41 EUR
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HFGM150D12V3 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Topology: IGBT half-bridge Mechanical mounting: screw Case: V3 62MM Type of semiconductor module: IGBT Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 150A Pulsed collector current: 350A Technology: PT Max. off-state voltage: 1.2kV |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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