HFGM150D12V3 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 350A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 350A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 75.43 EUR |
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Technische Details HFGM150D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Topology: IGBT half-bridge, Application: for UPS; Inverter, Pulsed collector current: 350A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Collector current: 150A, Gate-emitter voltage: ±30V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Technology: PT, Case: V3 62MM, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM150D12V3 nach Preis ab 75.43 EUR bis 75.43 EUR
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HFGM150D12V3 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 350A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 150A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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