HFGM150D12V3 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Pulsed collector current: 350A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: V3 62MM
Gate-emitter voltage: ±30V
Collector current: 150A
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Produktrezensionen
Produktbewertung abgeben
Technische Details HFGM150D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Topology: IGBT half-bridge, Pulsed collector current: 350A, Application: for UPS; Inverter, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Semiconductor structure: transistor/transistor, Case: V3 62MM, Gate-emitter voltage: ±30V, Collector current: 150A, Type of semiconductor module: IGBT, Technology: PT, Mechanical mounting: screw.

