HFGM200D12V3 HUAJING
Hersteller: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 79.39 EUR |
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Technische Details HFGM200D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 200A, Pulsed collector current: 400A, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: PT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: V3 62MM, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM200D12V3 nach Preis ab 79.39 EUR bis 79.39 EUR
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HFGM200D12V3 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 200A Pulsed collector current: 400A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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