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HFGM200D12V3

HFGM200D12V3 HUAJING


HFGM200D.pdf
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: V3 62MM
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+118.72 EUR
3+106.96 EUR
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Technische Details HFGM200D12V3 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Case: V3 62MM, Gate-emitter voltage: ±30V, Collector current: 200A, Pulsed collector current: 400A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Application: for UPS; Inverter, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Technology: PT, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw.