 
HFGM200D12V3 HUAJING
 Hersteller: HUAJING
                                                Hersteller: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Case: V3 62MM
Gate-emitter voltage: ±30V
Collector current: 200A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 1+ | 99.93 EUR | 
| 3+ | 89.98 EUR | 
| 10+ | 79.45 EUR | 
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Technische Details HFGM200D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Topology: IGBT half-bridge, Pulsed collector current: 400A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Electrical mounting: FASTON connectors; screw, Application: for UPS; Inverter, Type of semiconductor module: IGBT, Technology: PT, Mechanical mounting: screw, Case: V3 62MM, Gate-emitter voltage: ±30V, Collector current: 200A, Anzahl je Verpackung: 1 Stücke. 
Weitere Produktangebote HFGM200D12V3 nach Preis ab 89.98 EUR bis 99.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|   | HFGM200D12V3 | Hersteller : HUAJING |  Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Pulsed collector current: 400A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Application: for UPS; Inverter Type of semiconductor module: IGBT Technology: PT Mechanical mounting: screw Case: V3 62MM Gate-emitter voltage: ±30V Collector current: 200A | auf Bestellung 5 Stücke:Lieferzeit 14-21 Tag (e) | 
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