HFGM200D12V3 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 400A
Technology: PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 400A
Technology: PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details HFGM200D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: V3 62MM, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±30V, Pulsed collector current: 400A, Technology: PT, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM200D12V3
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HFGM200D12V3 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 400A Technology: PT Mechanical mounting: screw |
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