HFGM200D12V3 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Case: V3 62MM
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
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Technische Details HFGM200D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Case: V3 62MM, Gate-emitter voltage: ±30V, Collector current: 200A, Pulsed collector current: 400A, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Application: for UPS; Inverter, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Technology: PT.