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HFGM200D12V3

HFGM200D12V3 HUAJING


Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+78.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HFGM200D12V3 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Topology: IGBT half-bridge, Application: for UPS; Inverter, Pulsed collector current: 400A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Collector current: 200A, Gate-emitter voltage: ±30V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Technology: PT, Case: V3 62MM, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote HFGM200D12V3 nach Preis ab 78.91 EUR bis 78.91 EUR

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Preis
HFGM200D12V3 HFGM200D12V3 Hersteller : HUAJING Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+78.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH