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HFGM200D12V3

HFGM200D12V3 HUAJING


Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+79.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HFGM200D12V3 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: PT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: V3 62MM, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 200A, Pulsed collector current: 400A, Application: for UPS; Inverter, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote HFGM200D12V3 nach Preis ab 79.21 EUR bis 79.21 EUR

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Preis
HFGM200D12V3 HFGM200D12V3 Hersteller : HUAJING Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH