HFGM75D12V1 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
| Anzahl | Preis |
|---|---|
| 2+ | 52.77 EUR |
| 3+ | 47.52 EUR |
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Technische Details HFGM75D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Case: V1, Gate-emitter voltage: ±30V, Collector current: 75A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Application: for UPS; Inverter, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Technology: PT.