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HFGM75D12V1

HFGM75D12V1 HUAJING


Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+41.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HFGM75D12V1 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: PT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: V1, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 75A, Pulsed collector current: 200A, Application: for UPS; Inverter, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote HFGM75D12V1 nach Preis ab 41.48 EUR bis 41.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HFGM75D12V1 HFGM75D12V1 Hersteller : HUAJING Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH