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HGT1S15N120C3

HGT1S15N120C3 Harris Corporation


HRISS689-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: 35A, 1200V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 4004 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
75+6.62 EUR
Mindestbestellmenge: 75
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Technische Details HGT1S15N120C3 Harris Corporation

Description: 35A, 1200V, N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A, Supplier Device Package: TO-262 (I2PAK), Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 164 W.