HGTP2N120CN onsemi
Hersteller: onsemi
Description: IGBT NPT 1200V 13A TO-220-3
Power - Max: 104 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 30 nC
Test Condition: 960V, 2.6A, 51Ohm, 15V
Switching Energy: 96µJ (on), 355µJ (off)
Td (on/off) @ 25°C: 25ns/205ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details HGTP2N120CN onsemi
Description: IGBT NPT 1200V 13A TO-220-3, Power - Max: 104 W, Current - Collector Pulsed (Icm): 20 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 13 A, Part Status: Obsolete, Gate Charge: 30 nC, Test Condition: 960V, 2.6A, 51Ohm, 15V, Switching Energy: 96µJ (on), 355µJ (off), Td (on/off) @ 25°C: 25ns/205ns, IGBT Type: NPT, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
