Produkte > ONSEMI > HGTP2N120CN
HGTP2N120CN

HGTP2N120CN onsemi


HGTP2N120CN,HGT1SN120CN.pdf Hersteller: onsemi
Description: IGBT 1200V 13A 104W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details HGTP2N120CN onsemi

Description: IGBT 1200V 13A 104W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A, Supplier Device Package: TO-220-3, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/205ns, Switching Energy: 96µJ (on), 355µJ (off), Test Condition: 960V, 2.6A, 51Ohm, 15V, Gate Charge: 30 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 104 W.