Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1A01FU-GR,LXHF
HN1A01FU-GR,LXHF

HN1A01FU-GR,LXHF Toshiba Semiconductor and Storage

docget.jsp?did=19142&prodName=HN1A01FU Hersteller: Toshiba Semiconductor and Storage
Description: PNP + PNP BIPOLAR TRANSISTOR, -5
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
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Technische Details HN1A01FU-GR,LXHF Toshiba Semiconductor and Storage

Description: PNP + PNP BIPOLAR TRANSISTOR, -5, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP, Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Grade: Automotive, Qualification: AEC-Q101.