Technische Details HN1B04FE-GR,LF(T Toshiba
Category: Complementary transistors, Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A, Type of transistor: NPN / PNP, Polarisation: bipolar, Kind of transistor: complementary pair, Collector-emitter voltage: 50V, Collector current: 0.15A, Power dissipation: 0.1W, Case: SOT563F, Current gain: 200...400, Mounting: SMD, Kind of package: reel; tape, Frequency: 80MHz, Anzahl je Verpackung: 20 Stücke.
Weitere Produktangebote HN1B04FE-GR,LF(T nach Preis ab 0.043 EUR bis 0.069 EUR
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| HN1B04FE-GR,LF(T | Hersteller : TOSHIBA |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.1W Case: SOT563F Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Anzahl je Verpackung: 20 Stücke |
auf Bestellung 31960 Stücke: Lieferzeit 7-14 Tag (e) |
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| HN1B04FE-GR,LF(T | Hersteller : TOSHIBA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.1W Case: SOT563F Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
auf Bestellung 31960 Stücke: Lieferzeit 14-21 Tag (e) |
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