HUFA76407DK8T onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Technische Details HUFA76407DK8T onsemi
Description: MOSFET 2N-CH 60V 8SOIC, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).