IDD10SG60C Infineon Technologies
auf Bestellung 1579 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IDD10SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 10A; PG-TO252-3; 120W, Technology: CoolSiC™ 3G; SiC, Power dissipation: 120W, Case: PG-TO252-3, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: single diode, Max. off-state voltage: 0.6kV, Max. forward voltage: 1.8V, Load current: 10A, Leakage current: 0.8µA, Type of diode: Schottky rectifying, Max. forward impulse current: 44A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDD10SG60C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IDD10SG60C | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SiC; SMD; 600V; 10A; PG-TO252-3; 120W Technology: CoolSiC™ 3G; SiC Power dissipation: 120W Case: PG-TO252-3 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.6kV Max. forward voltage: 1.8V Load current: 10A Leakage current: 0.8µA Type of diode: Schottky rectifying Max. forward impulse current: 44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
IDD10SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 10A; PG-TO252-3; 120W Technology: CoolSiC™ 3G; SiC Power dissipation: 120W Case: PG-TO252-3 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.6kV Max. forward voltage: 1.8V Load current: 10A Leakage current: 0.8µA Type of diode: Schottky rectifying Max. forward impulse current: 44A |
Produkt ist nicht verfügbar |