IDT02S60C Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARB 600V 3A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 392+ | 1.25 EUR |
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Technische Details IDT02S60C Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 60pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: PG-TO220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A, Current - Reverse Leakage @ Vr: 15 µA @ 600 V.