IDW24G65C5BXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 650V 12A PGTO2473
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io) (per Diode): 12A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IDW24G65C5BXKSA1 Infineon Technologies
Description: DIODE ARR SIC 650V 12A PGTO2473, Current - Reverse Leakage @ Vr: 190 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO247-3, Current - Average Rectified (Io) (per Diode): 12A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.