IGN1011L70 Integra Technologies Inc.
Hersteller: Integra Technologies Inc.Description: RF MOSFET GAN HEMT 50V PL32A2
Packaging: Bulk
Package / Case: PL32A2
Mounting Type: Chassis Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 80W
Gain: 22dB
Technology: GaN HEMT
Supplier Device Package: PL32A2
Voltage - Rated: 120 V
Voltage - Test: 50 V
Current - Test: 22 mA
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 353.58 EUR |
| 10+ | 338.65 EUR |
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Technische Details IGN1011L70 Integra Technologies Inc.
Description: RF MOSFET GAN HEMT 50V PL32A2, Packaging: Bulk, Package / Case: PL32A2, Mounting Type: Chassis Mount, Frequency: 1.03GHz ~ 1.09GHz, Power - Output: 80W, Gain: 22dB, Technology: GaN HEMT, Supplier Device Package: PL32A2, Voltage - Rated: 120 V, Voltage - Test: 50 V, Current - Test: 22 mA.