IKU10N60RXK Infineon Technologies
Hersteller: Infineon TechnologiesDescription: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO-251-3-341
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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Technische Details IKU10N60RXK Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: PG-TO-251-3-341, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/192ns, Switching Energy: 210µJ (on), 380µJ (off), Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.