IMYR140R008M2HXLSA1 Infineon Technologies
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
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Technische Details IMYR140R008M2HXLSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 207A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 92.6A, 18V, Power Dissipation (Max): 710W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 29.1mA, Supplier Device Package: PG-TO247-4-18, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1400 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 1000 V.
Weitere Produktangebote IMYR140R008M2HXLSA1 nach Preis ab 46.24 EUR bis 74.02 EUR
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IMYR140R008M2HXLSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 207A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 92.6A, 18V Power Dissipation (Max): 710W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 29.1mA Supplier Device Package: PG-TO247-4-18 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1400 V Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 1000 V |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMYR140R008M2HXLSA1 |
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Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 207A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 92.6A, 18V
Power Dissipation (Max): 710W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 1000 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 207A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 92.6A, 18V
Power Dissipation (Max): 710W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 1000 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 74.02 EUR |
| 30+ | 49.18 EUR |
| 60+ | 46.24 EUR |