IPB033N10N5LF

IPB033N10N5LF INFINEON TECHNOLOGIES


IPB033N10N5LF.pdf Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 100V
Drain current: 108A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1000 Stücke
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Technische Details IPB033N10N5LF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3, Case: PG-TO263-3, Drain-source voltage: 100V, Drain current: 108A, On-state resistance: 3.3mΩ, Type of transistor: N-MOSFET, Power dissipation: 179W, Polarisation: unipolar, Technology: OptiMOS™ 5, Kind of channel: enhanced, Gate-source voltage: ±20V, Mounting: SMD, Anzahl je Verpackung: 1000 Stücke.

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IPB033N10N5LF IPB033N10N5LF Hersteller : INFINEON TECHNOLOGIES IPB033N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 100V
Drain current: 108A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar