IPB033N10N5LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 179W
Technology: OptiMOS™ 5
On-state resistance: 3.3mΩ
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Technische Details IPB033N10N5LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 108A, Case: PG-TO263-3, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Power dissipation: 179W, Technology: OptiMOS™ 5, On-state resistance: 3.3mΩ.