IPB033N10N5LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB033N10N5LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3, Case: PG-TO263-3, Mounting: SMD, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, On-state resistance: 3.3mΩ, Gate-source voltage: ±20V, Drain-source voltage: 100V, Drain current: 108A, Power dissipation: 179W, Kind of channel: enhancement, Anzahl je Verpackung: 1000 Stücke.
Weitere Produktangebote IPB033N10N5LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
IPB033N10N5LF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 108A Power dissipation: 179W Kind of channel: enhancement |
Produkt ist nicht verfügbar |