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IPB033N10N5LF

IPB033N10N5LF INFINEON TECHNOLOGIES

IPB033N10N5LF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 3.3mΩ
Mounting: SMD
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Technische Details IPB033N10N5LF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3, Power dissipation: 179W, Polarisation: unipolar, Technology: OptiMOS™ 5, Drain current: 108A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: PG-TO263-3, On-state resistance: 3.3mΩ, Mounting: SMD.