IPB033N10N5LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 100V
Drain current: 108A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1000 Stücke
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Technische Details IPB033N10N5LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3, Case: PG-TO263-3, Mounting: SMD, Drain-source voltage: 100V, Drain current: 108A, On-state resistance: 3.3mΩ, Type of transistor: N-MOSFET, Power dissipation: 179W, Polarisation: unipolar, Technology: OptiMOS™ 5, Kind of channel: enhancement, Gate-source voltage: ±20V, Anzahl je Verpackung: 1000 Stücke.
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IPB033N10N5LF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain-source voltage: 100V Drain current: 108A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |